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[IEEE 2009 10th International Symposium on Quality of Electronic Design (ISQED) - San Jose, CA, USA (2009.03.16-2009.03.18)] 2009 10th International Symposium on Quality of Electronic Design - Effect of NDD dosage on hot-carrier reliability in DMOS transistors

✍ Scribed by Chen, Jone F.; Tian, Kuen-Shiuan; Chen, Shiang-Yu; Wu, Kuo-Ming; Liu, C. M.

Book ID: 111968119
Publisher: IEEE
Year: 2009
Tongue: English
Weight: 340 KB
Volume: 0
Category: Article
ISBN: 1424429528
DOI: 10.1109/isqed.2009.4810298

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