[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Highly scalable NAND flash memory with robust immunity to program disturbance using symmetric inversion-type source and drain structure

✍ Scribed by Chang-Hyun Lee, ; Jungdal Choi, ; Park, Youngwoo; Changseok Kang, ; Byeong-In Choi, ; Hyunjae Kim, ; Hyunsil Oh, ; Won-Seong Lee,

• Book ID: 126670109
• Publisher: IEEE
• Year: 2008
• Weight: 301 KB
• Category: Article
• ISBN: 142441802X
• DOI: 10.1109/VLSIT.2008.4588585