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[IEEE 2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2008.04.21-2008.04.23)] 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Unipolar Switching Characteristics for Self-Aligned WOx Resistance RAM (R-RAM)

✍ Scribed by Chien, Wei-Chih; Lai, Erh-Kun; Chang, Kuo-Pin; Yeh, Chien-Hung; Hsueh, Ming-Hsiang; Yao, Yeong-Der; Luoh, Tuung; Hsieh, Sheng-Hui; Yang, T. H.; Chen, K. C.; Chen, Yi-Chou; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan

Book ID: 126804602
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 726 KB
Category: Article
ISBN: 1424416140
DOI: 10.1109/vtsa.2008.4530838

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