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[IEEE 2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2008.04.21-2008.04.23)] 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - First Demonstration of Deep Sub-Micron Germanium-on-Insulator PMOSFET with Adapted Threshold Voltage

✍ Scribed by Pouydebasque, A.; Le Royer, C.; Tabone, C.; Romanjek, K.; Augendre, E.; Sanchez, L.; Hartmann, J.-M.; Grampeix, H.; Mazzocchi, V.; Soliveres, S.; Truche, R.; Clavelier, L.; Deleonibus, S.

Book ID: 126713198
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 391 KB
Category: Article
ISBN: 1424416140
DOI: 10.1109/VTSA.2008.4530777

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