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[IEEE 2008 9th International Workshop and Tutorials on Electron Devices and Materials - Novosibirsk, Russia (2008.07.1-2008.07.5)] 2008 9th International Workshop and Tutorials on Electron Devices and Materials - The mathematical modeling of the MOS-transistors fabrication technique in modern TCAD-systems

✍ Scribed by Cherkaev, Aleksey S.; Makarov, Evgeny A.; Kalinin, Sergey V.

Book ID: 118219067
Publisher: IEEE
Year: 2008
Tongue: Russian
Weight: 347 KB
Volume: 0
Category: Article
ISBN: 5778208936
DOI: 10.1109/sibedm.2008.4585873

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