[IEEE 2008 1st IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems (NDCS 2008) - Cambridge, MA (2008.09.29-2008.09.30)] 2008 IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems - New SRAM Cell Design for Low Power and High Reliability Using 32nm Independent Gate FinFET Technology

✍ Scribed by Kim, Young Bok; Kim, Yong-Bin; Lombardi, Fabrizio

• Book ID: 118215266
• Publisher: IEEE
• Year: 2008
• Weight: 301 KB
• Volume: 0
• Category: Article
• ISBN: 0769533795
• DOI: 10.1109/ndcs.2008.16