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[IEEE 2007 International Workshop on Physics of Semiconductor Devices - Mumbai, India (2007.12.16-2007.12.20)] 2007 International Workshop on Physics of Semiconductor Devices - An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer

✍ Scribed by Lee, Jong-Seok; Shin, Ho-Hyun; Lee, Han-Sin; Kang, Ey-Goo; Sung, Man Young

Book ID: 121774394
Publisher: IEEE
Year: 2007
Weight: 433 KB
Category: Article
ISBN: 1424417287
DOI: 10.1109/IWPSD.2007.4472639

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