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[IEEE 2007 International Workshop on Physics of Semiconductor Devices - Mumbai, India (2007.12.16-2007.12.20)] 2007 International Workshop on Physics of Semiconductor Devices - An analytical model for admittance parameters of GaN MESFET for microwave circuit applications

✍ Scribed by Kabra, Sneha; Kaur, H.; Haldar, S.; Gupta, M.; Gupta, R. S.

Book ID: 118219049
Publisher: IEEE
Year: 2007
Weight: 111 KB
Volume: 0
Category: Article
ISBN: 1424417287
DOI: 10.1109/iwpsd.2007.4472548

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