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[IEEE 2007 International Workshop on Physics of Semiconductor Devices - Mumbai, India (2007.12.16-2007.12.20)] 2007 International Workshop on Physics of Semiconductor Devices - InAlN - A new barrier material for GaN-based HEMTs

✍ Scribed by Kohn, Erhard; Medjdoub, Farid

Book ID: 115498631
Publisher: IEEE
Year: 2007
Weight: 310 KB
Volume: 0
Category: Article
ISBN: 1424417287
DOI: 10.1109/iwpsd.2007.4472506

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