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[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices

✍ Scribed by Cheng, Weitao; Teramoto, Akinobu; Gaubert, Philippe; Hirayama, Masaki; Ohmi, Tadahiro

Book ID: 121381643
Publisher: IEEE
Year: 2006
Weight: 189 KB
Category: Article
ISBN-13: 9781424401604
DOI: 10.1109/ICSICT.2006.306078

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