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[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Closed-form Model of Barrier Height in Bulk MOSFET Including 2D Effects and Electron Statistics

✍ Scribed by Weidemann, Michaela; Jung, Melanie; Kloes, Alexander

Book ID: 120589186
Publisher: IEEE
Year: 2006
Weight: 125 KB
Category: Article
ISBN-13: 9781424401604
DOI: 10.1109/ICSICT.2006.306113

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