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[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Optimization of BSIM3 I-V Model for Double Diffused Drain HV MOSFET

✍ Scribed by Ren, Zheng; Hu, Shaojian; Shi, Yanling; Jun, Zhu; Chen, Shoumian; Zhao, Yuhang

Book ID: 118172859
Publisher: IEEE
Year: 2006
Weight: 189 KB
Volume: 0
Category: Article
ISBN-13: 9781424401604
DOI: 10.1109/icsict.2006.306157

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