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[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - Effects of surface Fermi level pinning and surface state charging on control characteristics of nanometer scale Schottky gates formed on GaAs

✍ Scribed by Kameda, A.; Kasai, S.; Sato, T.; Hasegawa, H.

Book ID: 120648759
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 318 KB
Category: Article
ISBN-13: 9780780374324
DOI: 10.1109/ISDRS.2001.984598

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