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[IEEE 2001 IEEE International SOI Conference. Proceedings - Durango, CO, USA (1-4 Oct. 2001)] 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207) - f/sub T/ variation caused by channel width effects in ladder gate structure for RF SOI MOSFETs

✍ Scribed by Hyeokjae Lee, ; Jono-Ho Lee, ; Young June Park, ; Hong Shick Min,

No coin nor oath required. For personal study only.

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