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[IEEE 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (30 Sept.-2 Oct. 2001)] Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212) - An accurate transistor model for simulating avalanche-breakdown effects in Si bipolar circuits

✍ Scribed by Rickelt, M.; Rein, H.-M.

Book ID: 126698405
Publisher: IEEE
Year: 2001
Weight: 426 KB
Category: Article
ISBN-13: 9780780370197
DOI: 10.1109/BIPOL.2001.957852

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