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[IEEE 2000 Symposium on VLSI Technology. Digest of Technical Papers - Honolulu, HI, USA (13-15 June 2000)] 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) - Advantage of radical oxidation for improving reliability of ultra-thin gate oxide

✍ Scribed by Saito, Y.; Sekine, K.; Ueda, N.; Hirayama, M.; Sugawa, S.; Ohmi, T.

Book ID: 120008633
Publisher: IEEE
Year: 2000
Weight: 289 KB
Edition: 1
Category: Article
ISBN-13: 9780780363052
DOI: 10.1109/VLSIT.2000.852815

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