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[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - First-principles-based predictive simulations of B diffusion and activation in ion implanted Si

✍ Scribed by Theiss, S.K.; Caturla, M.-J.; Lenosky, T.J.; Sadigh, B.; Diaz de la Rubia, T.; Giles, M.D.; Foad, M.A.

Book ID: 126721026
Publisher: IEEE
Year: 2000
Weight: 386 KB
Category: Article
ISBN-13: 9780780362796
DOI: 10.1109/SISPAD.2000.871196

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