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[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Modeling of boron deactivation/activation kinetics during ion implant annealing

✍ Scribed by Chakravarthi, S.; Dunham, S.T.

Book ID: 126667945
Publisher: IEEE
Year: 2000
Weight: 259 KB
Category: Article
ISBN-13: 9780780362796
DOI: 10.1109/SISPAD.2000.871234

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