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[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Simulation of hot hole currents in ultra-thin silicon dioxides: the relationship between time to breakdown and hot hole currents

✍ Scribed by Ezaki, T.; Nakasato, H.; Yamamoto, T.; Hane, M.

Book ID: 126607481
Publisher: IEEE
Year: 2000
Weight: 327 KB
Category: Article
ISBN-13: 9780780362796
DOI: 10.1109/SISPAD.2000.871200

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