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[IEEE 1996 IEEE International SOI Conference Proceedings - Sanibel Island, FL, USA (30 Sept.-3 Oct. 1996)] 1996 IEEE International SOI Conference Proceedings - Sub-0.25 μm ultra-thin SOI CMOS with a single N+ gate process for low-voltage and low-power applications

✍ Scribed by Raynaud, C.; Faynot, O.; Pelloie, J.L.; Tedesco, S.; Ullmann, B.; Dunne, B.; Guegan, G.; Lerme, M.

No coin nor oath required. For personal study only.

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