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[IEEE 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. - Kagoshima, Japan (May 31 - June 4, 2004)] 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. - Photoluminescence characterization of InGaAs/AlGaAs strained-quantum well active layer on GaAs substrate with 1.02-1.06-μm wavelength composition under high-power 920-nm-laser excitation

✍ Scribed by Nakao, M.; Yuda, M.

Book ID
121473430
Publisher
IEEE
Year
2004
Weight
548 KB
Category
Article
ISBN-13
9780780385955

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