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[IEEE 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings - Toulouse, France (22-25 May 2000)] 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) - The effect of static and dynamic parasitic charge in the termination area of high voltage devices and possible solutions

✍ Scribed by Trajkovic, T.; Udrea, F.; Waind, P.R.; Amaratunga, G.A.J.

Book ID: 118258290
Publisher: IEEE
Year: 2000
Weight: 464 KB
Volume: 0
Category: Article
ISBN-13: 9780780362697
DOI: 10.1109/ispsd.2000.856821

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