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[IEEE 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings - Toulouse, France (22-25 May 2000)] 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) - Advantages of thick CVD gate oxide for trench MOS gate structures

✍ Scribed by Nakamura, K.; Kusunoki, S.; Nakamura, H.; Harada, M.

Book ID: 111879178
Publisher: IEEE
Year: 2000
Weight: 519 KB
Edition: 1
Volume: 0
Category: Article
ISBN-13: 9780780362697
DOI: 10.1109/ispsd.2000.856778

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