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[IEEE 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium - San Diego, CA, USA (22-25 Oct. 1989)] 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium - 2 k gate circuits with 125 ps gate delay using GaAs HFET technology

✍ Scribed by Leung, W.B.; Lo, Y.K.; Oh, Y.T.; Oswald, W.A.; Poon, E.K.; Reid, C.E.; Ackner, L.E.; Poon, T.C.

Book ID: 126612542
Publisher: IEEE
Year: 1989
Weight: 252 KB
Category: Article
DOI: 10.1109/GAAS.1989.69293

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