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[IEEE 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium - San Diego, CA, USA (22-25 Oct. 1989)] 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium - Radiation hardness characteristics of GaAs/AlGaAs heterojunction bipolar transistors

✍ Scribed by Song, Y.; Kim, M.E.; Oki, A.K.; Hafizi, M.E.; Camou, J.B.; Kobayashi, K.W.

Book ID: 121714608
Publisher: IEEE
Year: 1989
Weight: 370 KB
Category: Article
DOI: 10.1109/gaas.1989.69316

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