Identification and Quantification of Defects in Highly Si-Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy

✍ Scribed by Gebauer, J.; Krause-Rehberg, R.; Domke, C.; Ebert, Ph.; Urban, K.

• Book ID: 127331961
• Publisher: The American Physical Society
• Year: 1997
• Tongue: English
• Weight: 199 KB
• Volume: 78
• Category: Article
• ISSN: 0031-9007
• DOI: 10.1103/physrevlett.78.3334