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Ideal static induction transistor implemented with molecular layer epitaxy

✍ Scribed by Piotr Płotka; Toru Kurabayashi; Yutaka Oyama; Jun-ichi Nishizawa

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
529 KB
Volume
82-83
Category
Article
ISSN
0169-4332

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Monomolecular layer epitaxy of GaAs for
Monomolecular layer epitaxy of GaAs for ideal static induction transistor
✍ Jun-ichi Nishizawa; Toru Kurabayashi 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 276 KB

An ideal static induction transistor (ISIT) structure was fabricated using molecular layer epitaxy (MLE). The doping method of MLE enabled us to achieve a sufficiently high level of doping for ISIT fabrication. In the fabrication process a low growth temperature was very important for the device str