✍ Scribed by Eluvathingal D. Jemmis; Dasari L.V.K. Prasad
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
From many experimental studies, a localized intrinsic acceptor level is assumed to exist at about 0.2 eV above the valence band edge in -rhombohedral boron. The acceptor level has been tentatively originated from the unoccupied intracluster bonding level split away from the valence band due to the d
Modulated photocurrent measurements were performed on amorphous boron, -rhombohedral boron, and Al-Pd-Re quasicrystal. For the quasicrystal, this is the first report on photoconductivity. The data obtained for amorphous boron are analyzed by a typical model which assumes interband photocarrier gener
Optical conductivities and dielectric functions derived from the IR-optical reflectivity spectra exhibit clear similarities between icosahedral boron-rich structures and Al-based isosahedral quasicyrstals. This suggests a close qualitative relationship of their electronic structures. Accordingly ico