For -rhombohedral boron and boron carbide, the hitherto best-investigated icoasahedral boron-rich solids, the concentrations of structural defects and electronic gap states are quantitatively correlated. In this way the theoretically determined valence electron de5ciencies are exactly compensated, a
β¦ LIBER β¦
Correlation between structural defects and electronic properties of icosahedral boron-rich solids
β Scribed by Schmechel, R; Werheit, H
- Book ID
- 121435745
- Publisher
- Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 144 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0953-8984
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Structural Defects of Some Icosahedral B
β
R. Schmechel; H. Werheit
π
Article
π
2000
π
Elsevier Science
π
English
β 173 KB
Unusual Properties of Icosahedral Boron-
β
David Emin
π
Article
π
2006
π
John Wiley and Sons
β 8 KB
Evidence of the Relationship of the Elec
β
H. Werheit; R. Schmechel; K. Kimura; R. Tamura; T. LundstrΓΆm
π
Article
π
1997
π
Elsevier Science
π
English
β 238 KB
Optical conductivities and dielectric functions derived from the IR-optical reflectivity spectra exhibit clear similarities between icosahedral boron-rich structures and Al-based isosahedral quasicyrstals. This suggests a close qualitative relationship of their electronic structures. Accordingly ico
Structure and properties of boron-rich s
β
Kaoru Kimura
π
Article
π
1993
π
Elsevier Science
π
English
β 374 KB
Correlation between structural and elect
β
E.E. Horopanitis; G. Perentzis; A. Beck; L. Guczi; G. Peto; L. Papadimitriou
π
Article
π
2008
π
Elsevier Science
π
English
β 189 KB
Electronic structures and mechanical pro
β
K. Shirai
π
Article
π
2010
π
Allerton Press, Inc.
π
English
β 409 KB