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Hydrogenic impurity binding energy in self-assembled GaAs/Ga1-xAlxAs quantum rings

✍ Scribed by Wang, Guangxin; Zhang, Peng

Book ID
111960886
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
548 KB
Volume
103
Category
Article
ISSN
0021-8979

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πŸ“œ SIMILAR VOLUMES

Energy levels of hydrogenic impurity sta
Energy levels of hydrogenic impurity states in GaAs-Ga1βˆ’xAlxAs quantum well structures
✍ Ronald L. Greene; K.K. Bajaj πŸ“‚ Article πŸ“… 1983 πŸ› Elsevier Science 🌐 English βš– 363 KB

Binding energies of the ground state and of four excited states of a hydrogenic impurity in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite slabs of Ga~\_~AlxAs are calculated using a variational approach. The ground-state binding energy is calculated