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Hydrogenation effect on silicon on sapphire grown by rapid thermal chemical vapor deposition

✍ Scribed by Hoon Young Cho; Chan Jin Park

Book ID
104428258
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
302 KB
Volume
16
Category
Article
ISSN
1386-9477

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Chemical vapor deposition of Ξ²-SiC on si
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✍ J.C. Pazik; G. Kelner; N. Bottka; J.A. Freitas Jr. πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 381 KB

Cubic silicon carbide (t-SiC) films have been grown epitaxially on silicon-on-sapphire (SOS) substrates by chemical vapor deposition. A fresh layer of silicon is first deposited in situ on the SOS substrate at approximately 1050 Β°C. The silicon layer is then carbonized while being heated to 1360 Β°C.