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Hydrogen-sensitive Ni/SiO2/a-Si:H Schottky diodes

✍ Scribed by A. Ortíz; S. López; J.C. Alonso; S. Muhl


Book ID
103429998
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
320 KB
Volume
207
Category
Article
ISSN
0040-6090

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Hydrogenation of GaAs-on-Si Schottky dio
✍ G Wang; T Ogawa; T Soga; T Egawa; T Jimbo; M Umeno 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 137 KB

The surface phosphidization and bulk hydrogenation for GaAs on Si has been realized simultaneously using the Ž . phosphine PH -added H plasma-exposure schemes. The PH rH plasma-exposed GaAs Schottky diodes showed Ž . significant increase in reverse breakdown voltage V , which was believed to be due