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Hydrogen passivation of Fe-related deep energy levels at a direct silicon-bonded (1 1 0)/(1 0 0) grain boundary

✍ Scribed by Xuegong Yu; Xiaoqiang Li; Dong Lei; Deren Yang; George Rozgonyi


Book ID
113898844
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
440 KB
Volume
64
Category
Article
ISSN
1359-6462

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The grain structure of polycrystalline materials is controlled by recrystallization processes which are strongly affected by the character of moving interfaces. To elucidate an anisotropy of grain boundary motion, the temperature dependence of migration of a 45 β€’ [1 0 0], {0 k l} symmetrical and a (