Hydrogen passivation and thermal reactivation of zinc double acceptors in silicon

✍ Scribed by P Stolz; G Pensl; D Grünebaum; N Stolwijk

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 308 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90211-0

✦ Synopsis

Zinc-d(ffi~sed silicon samples are investigated by deep level transient spectroscopy (DL 75). "lhe isolated zinc double acceptor (Zn o/-, Zn -/2-) as well as two zinc-related centres (Zn(X1), Zn(X2)) are observed in the DLTiS" spectra. The electrically active concentrations of these centres can be reduced below the detection limit by a hydrogenation process. The zinc double acceptor and centre Zn(XI) recover again after a heat treatment. A reactivation of centre Zn(X2) cannot be observed because it is not stable at temperatures above 400 °C. Using first-order kinetics', the reactivation energy of the zinc double acceptor is" determined as 2.2+_0.3eV.