Hydrogen neutralization of dopant in p-type Ga0.47In0.53As

✍ Scribed by B. Theys; A. Jalil; J. Chevallier; A.M. Huber; C. Grattepain; P. Hirtz; B. Pajot

• Book ID: 103936085
• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 312 KB
• Volume: 170
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(91)90156-9

✦ Synopsis

Diffusion of hydrogen has been performed in a series of zinc doped GalnAs layers using a RF hydrogen plasma. In highly doped (~l(l~9/cm3) materials, the free hole concentration decrease is accompanied by a significant increase of the hole mobility indicating a neutralization process of acceptors. Layers doped at a level of ~10~/cm ~ turn to n-type after hydrogenation. We also show that the hydrogen solubility in this material is fixed by the free hole density rather than by the hydrogen plasma conditions.