✦ LIBER ✦

Hydrogen in phosphorus- and carbon-doped crystalline silicon

✍ Scribed by A.L. Endrös; W. Krühler; J. Grabmaier

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 448 KB
Volume: 170
Category: Article
ISSN: 0921-4526
DOI: 10.1016/0921-4526(91)90148-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Stress-induced hydrogen motion in Boron-

Stress-induced hydrogen motion in Boron-doped crystalline silicon

✍ C.P. Herrero; M. Stutzmann 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 285 KB

Optical studies of irradiated crystallin

Optical studies of irradiated crystalline silicon doped with carbon and lithium

✍ T.K. Kwok 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 510 KB

Interstitial muons and hydrogen in cryst

Interstitial muons and hydrogen in crystalline silicon

✍ A. Mainwood; A.M. Stoneham 📂 Article 📅 1983 🏛 Elsevier Science ⚖ 249 KB

ESR linewidth in heavily phosphorus-dope

ESR linewidth in heavily phosphorus-doped silicon

✍ Hiroyuki Nagashima; Yuichi Ochiai; Etsuyuki Matsuura 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 244 KB

Hydrogen-related vibrations in crystalli

✍ P. Deák; M. Heinrich; L.C. Snyder; J.W. Corbett 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 377 KB

States of hydrogen in crystalline silico

States of hydrogen in crystalline silicon

✍ M. Stutzmann; W. Beyer; L. Tapfer; C.P. Herrero 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 306 KB

Thc thermal transformation ol deuterium it] p-type crvslallinc silicon is sludicd wilt] a '~aricty ol experimental techniques. It is found lhal D-atolns initially mippcd at acceptor sites can hc transferred b~ low temperature annealing to a different state lcnlati~,c]\ ascribed to intcrstilia[ l). m