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Hydrogen in oxidized silicon oxynitride thin films

โœ Scribed by J.B.Oude Elferink; F.H.P.M. Habraken; W.F. van der Weg; A.E.T. Kuiper


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
313 KB
Volume
33-34
Category
Article
ISSN
0169-4332

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This work reports a detailed study of the re-oxidation effects on the hydrogen content and optical properties of silicon oxynitride films grown by plasma enhanced chemical vapor deposition (PECVD) with N 2 O, NH 3 and SiH 4 as the precursors. Results showed that the silicon oxynitride deposited with