𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Hydrodynamic simulation of hysteresis phenomena in SOI MOSFET characteristics

✍ Scribed by I. Bork; B. Meinerzhagen; W.L. Engl

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
208 KB
Volume
19
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Temperature dependence of drain current
Temperature dependence of drain current hysteresis in FD and PD-SOI n-MOSFETs
✍ K. Hayama; K. Takakura; H. Ohyama; J.M. RafΓ­; A. Mercha; E. Simoen; C. Claeys πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 175 KB

The hysteresis characteristics of the drain current (I D ) in FD-SOI n-MOSFETs are examined at different back gate voltage and temperature. The relationship between the hysteresis and the temperature is discussed in comparison with the result for PD-SOI n-MOS-FETs, taking into account the back gate

Quantum Hydrodynamic Simulation of Hyste
Quantum Hydrodynamic Simulation of Hysteresis in the Resonant Tunneling Diode
✍ Zhangxin Chen; Bernardo Cockburn; Carl L. Gardner; Joseph W. Jerome πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 251 KB

Hysteresis in the current-voltage curve of a resonant tunneling diode is simulated and analyzed in the quantum hydrodynamic (OHD) model for semiconductor devices. The simulations are the first to show hysteresis in the QHD equations and to confirm that bistability is an intrinsic property of the res