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Hybridization of GaAs, AlAs and (Al, Ga)As with carbon nanotubes by molecular beam epitaxy

✍ Scribed by I. T. Jeong; M. B. Lee; J. Im; S. Hong; J. Park; M. J. Seong; S. J. Rhee; D. H. Woo; J. C. Woo


Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
260 KB
Volume
3
Category
Article
ISSN
1862-6351

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Growth dynamics of GaAs, AlAs and (Al, G
✍ B. A. Joyce; J. H. Neave; M. R. Fahy; K. Sato; D. M. Holmes; J. G. Belk; J. L. S πŸ“‚ Article πŸ“… 1996 πŸ› Springer US 🌐 English βš– 816 KB

The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 0