Growth dynamics of GaAs, AlAs and (Al, G
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B. A. Joyce; J. H. Neave; M. R. Fahy; K. Sato; D. M. Holmes; J. G. Belk; J. L. S
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Article
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1996
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Springer US
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English
β 816 KB
The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 0