๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Hot holes in naphthalene: High, electric-field-dependent mobilities

โœ Scribed by Warta, Wilhelm; Karl, Norbert


Book ID
111903199
Publisher
The American Physical Society
Year
1985
Tongue
English
Weight
830 KB
Volume
32
Category
Article
ISSN
1098-0121

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


High electric field hole mobility in a-S
โœ G Juลกka; K Arlauskas; B Equer; R Vanderhaghen ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 84 KB
Electric field dependence of photoconduc
โœ N.V. Joshi; Mireya Castillo N. ๐Ÿ“‚ Article ๐Ÿ“… 1977 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 162 KB

Electric field dcpendcncc of photoconductivity ha been studied in naphthaleno in the range bctwccn 7 X 10' V/m and 26 X 105 V/m. The Onsager theory of rccomhination successfu~y evplams the cxpcrimcntal data.

High electric field mobility in InSb
โœ E. Kartheuser; R. Evrard ๐Ÿ“‚ Article ๐Ÿ“… 1972 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 270 KB
Field dependence of hole mobilities in c
โœ A. Ioannidis; M.F. Lawrence; H. Kassi; R. Cotรฉ; J.P. Dodelet; R.M. Leblanc ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 371 KB

Drift mobility measurements were. performed on the hole-transport organic semiconductor chloro-aluminum phthalocyanine using a time-of--flight technique. The photocurmnt transients were featureless decay curves and transit times were determined from the logarithmic representation of photocurrent ver