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Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

✍ Scribed by Ni, X.; Li, X.; Lee, J.; Liu, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Matulionis, A.

Book ID
120397973
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
527 KB
Volume
108
Category
Article
ISSN
0021-8979

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## Abstract Efficiency and efficiency retention in InGaN LEDs has recently received considerable attention. In this realm, we investigated internal quantum efficiency (IQE) and relative external quantum efficiency (EQE) of __c__‐plane InGaN LEDs designed for emission at ∼420 nm from the active regi