Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET's designed for microwave power applications

✍ Scribed by Menozzi, R.; Pavesi, M.; Manfredi, M.; Ghezzi, C.; Lanzieri, C.; Peroni, M.; Canali, C.

• Book ID: 114537468
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 177 KB
• Volume: 45
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.726636