𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Hopping current density in amorphous carbon/crystalline silicon heterojunctions

✍ Scribed by T. Katsuno; C. Godet; A.S. Loir; F. Garrélie

Book ID
116668855
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
160 KB
Volume
352
Category
Article
ISSN
0022-3093

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Properties of interfaces in amorphous/cr
Properties of interfaces in amorphous/crystalline silicon heterojunctions
✍ Olibet, Sara ;Vallat-Sauvain, Evelyne ;Fesquet, Luc ;Monachon, Christian ;Hessle 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 852 KB

## Abstract To study recombination at the amorphous/crystalline Si (a‐Si:H/c‐Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechan