In the present work, we theoretically investigate the energy relaxation of electrons due to acoustic and optical phonon scattering in quantum-dot systems embedded in a Si metal-oxide-semiconductor structure with (1 0 0) surface orientation. The conÿnement potential normal to the Si=SiO 2 interface i
Homogeneous linewidth of optical transitions and multiple electron–LO–phonon scattering in quantum dots
✍ Scribed by Karel Král; Zdeněk Khás
- Book ID
- 114155993
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 96 KB
- Volume
- 51-52
- Category
- Article
- ISSN
- 0167-9317
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