To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot
Electron–phonon interaction and intraband magneto-optical transitions in doped InAs/GaAs quantum dots
✍ Scribed by J.N. Isaia; S. Hameau; E. Deleporte; Y. Guldner; O. Verzelen; R. Ferreira; G. Bastard; J. Zeman; J.M. Gérard
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 100 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
We have investigated the far infrared magneto-optical transitions in InAs quantum dots. A purely electronic model being unable to account for the experimental data, we have calculated the polaron states and the energies of the dipolar electric transition resulting from the coupling between the mixed electron-LO-phonon states. The excellent agreement between the experiments and the calculations shows that the transitions arise between polaron states and that the electrons and LO-phonons experience a strong coupling regime.
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