Hollow Silicon Carbide Nanostructures
โ Scribed by A. I. Kharlamov; N. V. Kirillova; S. N. Kaverina
- Book ID
- 110396960
- Publisher
- Springer
- Year
- 2002
- Tongue
- English
- Weight
- 92 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0040-5760
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The synthesis and characterization of hollow nanospheres, nanowires and coaxial nanowires of cubic phase silicon carbide (b-SiC) were reported. The reaction between SiCl 4 (or Si powders), C 6 Cl 6 and sodium was used to prepare SiC nanostructures at different temperature. The samples were character
The atomic scale ordering and properties of cubic silicon carbide surfaces are investigated by room and high-temperature scanning tunneling microscopy. In this review, we will focus on the Si-terminated b-SiC(100) surfaces only. Self-formation of Si atomic lines and dimer vacancy chains on the b-SiC