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Hole subband structure and mobility calculations of double p-type d-doped GaAs quantum wells

✍ Scribed by I. Rodriguez-Vargas; L. M. Gaggero-Sager


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
169 KB
Volume
2
Category
Article
ISSN
1862-6351

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✍ L.M. Gaggero-Sager πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 133 KB πŸ‘ 2 views

We present the electronic structure of p-type d-doped quantum wells in Si and GaAs including exchange effects in the Thomas-Fermi-Dirac approximation. We also carry out Schro Β¨dinger-Poisson self-consistent calculations considering the particularities the exchange potential has in the Local Density