Hole-Mobility Enhancement in Ge-Rich Strained SiGe-on-Insulator pMOSFETs at High Temperatures

✍ Scribed by Tezuka, T.; Nakaharai, S.; Moriyama, Y.; Hirashita, N.; Sugiyama, N.; Tanabe, A.; Usuda, K.; Takagi, S.

• Book ID: 114618676
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 198 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.893663