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Hole crystallization in semiconductors

✍ Scribed by Bonitz, M; Filinov, V S; Fortov, V E; Levashov, P R; Fehske, H

Book ID
121404707
Publisher
Institute of Physics
Year
2006
Tongue
English
Weight
163 KB
Volume
39
Category
Article
ISSN
0305-4470

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## Abstract The transport properties of holes in cubic semiconductors have been studied with a Monte Carlo technique taking into account polar scattering within and between the two valence bands degenerate at __K__ = 0. The predominant p‐like symmetry of the valence band wave functions has been fou