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Hole confinement in boron δ-doped Si quantum wells studied by admittance spectroscopy

✍ Scribed by Jian-hong Zhu; Da-wei Gong; Bo Zhang; Fang Lu; Chi Sheng; Heng-hui Sun; Xun Wang

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 284 KB
Volume: 157
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)00358-4

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